发明名称 Substrate and method of forming substrate for mems device with strain gage
摘要 A substrate (20) for a MEMS device includes a base material (40) having a first side (42), a poly silicon strain gage (30) formed on the first side of the base material, a dielectric material (52) disposed over the strain gage, and a conductive material (62) in communication with the strain gage through the dielectric material, wherein the substrate is adapted to have at least one opening (26) formed therethrough, and wherein the strain gage is adapted to be formed adjacent the at least one opening. <IMAGE>
申请公布号 EP1457766(A1) 申请公布日期 2004.09.15
申请号 EP20040251352 申请日期 2004.03.09
申请人 HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. 发明人 NIKKEL, ERIC LEE
分类号 B41J2/045;B41J2/055;B41J2/14;B41J2/16;B81B1/00;B81B7/02;G01L1/18;G01L1/22;(IPC1-7):G01L1/22;G01L9/04 主分类号 B41J2/045
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