发明名称 |
Self ionized sputtering using a high density plasma source |
摘要 |
A magnetron especially advantageous for low-pressure plasma sputtering or sustained self-sputtering having reduced area but full target coverage. The magnetron includes an outer pole face surrounding an inner pole face with a gap therebetween. The outer pole of the magnetron of the invention is smaller than that of a circular magnetron similarly extending from the center to the periphery of the target and has a substantially larger total magnetic intensity. Thereby, sputtering at low pressure and high ionization fraction is enabled.
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申请公布号 |
US6790323(B2) |
申请公布日期 |
2004.09.14 |
申请号 |
US20010918136 |
申请日期 |
2001.07.30 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
FU JIANMING;GOPALRAJA PRABURAM;CHEN FUSEN;FOSTER JOHN |
分类号 |
C23C14/35;H01J37/34;(IPC1-7):C23C14/35 |
主分类号 |
C23C14/35 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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