发明名称 Reducing layer separation and cracking in semiconductor devices
摘要 An apparatus and a method for reducing layer separation and cracking in semiconductor devices. A structure is formed over a semiconductor wafer that includes die separated by scribe streets and that includes probe pads for testing die. A notch is cut within a scribe street so as to expose an open area that does not contain any probe pad and that does not contain any metal layers. The wafer is then severed into semiconductor devices by extending a cutting blade through the open area. A semiconductor device is then electrically and physically coupled to a ball grid array substrate to form a ball grid array device having reduced layer separation and cracking.
申请公布号 US6791197(B1) 申请公布日期 2004.09.14
申请号 US20020227772 申请日期 2002.08.26
申请人 INTEGRATED DEVICE TECHNOLOGY, INC. 发明人 KATZ ANNE T.
分类号 B28D5/02;H01L21/58;H01L21/60;H01L21/78;H01L23/544;H01L23/58;H01L29/06;H01L29/40;(IPC1-7):H01L29/40 主分类号 B28D5/02
代理机构 代理人
主权项
地址
您可能感兴趣的专利