发明名称 |
Method for producing a semiconductor component comprising a t-shaped contact electrode |
摘要 |
In order to fabricate a semiconductor component having a contact electrode that is T-shaped in cross section, in particular a field-effect transistor with a T gate, a method is described in which a self-aligning positioning of gate base and gate head is effected by means of a spacer produced on a material edge.
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申请公布号 |
US6790717(B2) |
申请公布日期 |
2004.09.14 |
申请号 |
US20030466530 |
申请日期 |
2003.07.17 |
申请人 |
UNITED MONOLITHIC SEMICONDUCTORS GMBH |
发明人 |
BEHAMMER DAG |
分类号 |
H01L29/423;H01L21/285;H01L21/335;H01L21/338;H01L29/41;H01L29/812;(IPC1-7):H01L21/338 |
主分类号 |
H01L29/423 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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