发明名称 SYSTEM FOR UNIFORM DEPOSITION OF NANO OXIDE FILM AND/OR NANO NITRIDE FILM ON ULTRA FINE GRAINS BY ATOMIC LAYER DEPOSITION (ALD)
摘要 PURPOSE: A surface modification system of ultra fine grains is provided to form a thin film having nano unit thickness on the surface of the ultra fine grains in such a way that thickness of the thin film can be controlled. CONSTITUTION: The surface modification system of ultra fine grains comprises a raw gas supply part for alternately supplying at least two types of raw gases within a preset cycle; and a reactor(50) for modifying the surface of the ultra fine grains by reacting the raw gases on the surface of the ultra fine grains after containing ultra fine grains whose surface is to be modified in the reactor and alternately receiving at least two types of raw gases from the raw gas supply part, wherein the raw gas supply part comprises at least two raw gas cans, a purge gas can, a gas flow controller, at least two first valves, a vacuum pump(64), at least two second valves, third valve and at least two fourth valves, wherein the reactor comprises a gas inflow pipe(55), an injector(56), a reaction chamber(52), a rotation part(54), a preliminary chamber(51), a vacuum treatment means and a heater(58), wherein the reaction chamber comprises a dissociation part(57) installed on the inner circumferential surface of the other end of the reaction chamber to prevent ultra fine grains from cohering, and wherein the dissociation part comprises balls collided with the ultra fine grains to disperse them.
申请公布号 KR20040079034(A) 申请公布日期 2004.09.14
申请号 KR20030013931 申请日期 2003.03.06
申请人 KONGJU NATIONAL UNIVERSITY INDUSTRY ACADEMIA COOPERATION GROUP 发明人 KIM, DONG SEON;KIM, JIN GWON;LEE, GI SEON
分类号 B22F1/02;(IPC1-7):B22F1/02 主分类号 B22F1/02
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