发明名称 Method for manufacturing a semiconductor device
摘要 A method for manufacturing a semiconductor device includes the steps of providing a substrate, depositing a monocrystalline sacrificial layer onto the substrate, depositing a monocrystalline function layer onto the sacrificial layer, and removing at least part of the sacrificial layer after the function layer depositing step.
申请公布号 US6790699(B2) 申请公布日期 2004.09.14
申请号 US20020193351 申请日期 2002.07.10
申请人 ROBERT BOSCH GMBH 发明人 VOSSENBERG HEINZ-GEORG;FREY WILHELM
分类号 B81B3/00;(IPC1-7):H01L21/00 主分类号 B81B3/00
代理机构 代理人
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