发明名称 |
Self-aligned dual-gate transistor device and method of forming self-aligned dual-gate transistor device |
摘要 |
Embodiments in accordance with the present invention provide methods of forming a dual gated semiconductor-on-insulator (SOI) device. Such methods encompass forming a first transistor structure operatively adjacent a first side of the semiconductor layer of an SOI substrate. Insulator layer material is removed from the second side of the semiconductor layer, between the source/drain contact structures of the first transistor structure and a second transistor structure there formed operatively adjacent the second side of the semiconductor layer and aligned to the first transistor structure.
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申请公布号 |
US6790732(B2) |
申请公布日期 |
2004.09.14 |
申请号 |
US20030455975 |
申请日期 |
2003.06.06 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
ZAHURAK JOHN K.;KEETH BRENT;DENNISON CHARLES H. |
分类号 |
H01L21/336;H01L21/84;H01L27/12;H01L29/786;(IPC1-7):H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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