FLASH MEMORY DEVICE AND FABRICATING METHOD THEREOF TO PREVENT FLOATING GATES OF ADJACENT MEMORY CELLS FROM BEING ELECTRICALLY CONNECTED

摘要

PURPOSE: A flash memory device is provided to prevent floating gates of adjacent memory cells from being electrically connected by forming an inter-gate dielectric after a floating gate is formed and by forming a word line on the inter-gate dielectric. CONSTITUTION: An isolation layer(54) defines an active region(40), disposed on a semiconductor substrate. A lower pattern of a floating gate is formed on the active region. An interlayer dielectric is formed on the semiconductor substrate with the floating gate lower pattern, including a hole(76) with a sidewall on the floating gate. An upper pattern(82) of the floating gate is of a pillar type with a sidewall separated from the sidewall of the hole, formed on the lower pattern(56W). A gate region is formed between the sidewall of the upper pattern and the inner wall of the hole. The inter-gate dielectric(74) is conformally formed on the gap region and the upper pattern. The gap region is filled with a control gate electrode(86) formed on the gate interlayer dielectric.