Self-aligned contact/borderless contact opening and method for forming same

摘要

A method for forming a self-aligned contact (SAC)/borderless contact opening includes forming a shallow trench isolation (STI) structure in a substrate to define an active area. A gate structure including a cap layer is formed. The gate structure is formed on the substrate and oriented perpendicular to the STI structure and the active area. An oxide spacer is formed on at least one of the sidewalls of the gate structure. A conformal liner layer is formed on the substrate covering the gate structure, the oxide spacer, and the STI structure. An inter-layer dielectric (ILD) layer is formed on the substrate covering the liner layer. The ILD layer is patterned and etched to define a SAC/borderless contact opening. A SAC/borderless contact opening structure also is described.