发明名称 |
Method for preventing photoresist poisoning |
摘要 |
A method if provided for improving a photolithographic patterning process in a dual damascene process by forming a resinous plug in a via opening to prevent out diffusion of nitrogen containing species from a low-k IMD layer in subsequent lithographic patterning and RIE etching processes to form a trench opening formed substantially over the via opening.
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申请公布号 |
US6790770(B2) |
申请公布日期 |
2004.09.14 |
申请号 |
US20010035690 |
申请日期 |
2001.11.08 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD |
发明人 |
CHEN CHAO-CHENG;LIU JEN-CHENG;SHIEH JYU-HORNG |
分类号 |
H01L21/768;(IPC1-7):H01L21/476 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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