Power semiconductor device manufactured using a chip-size package

摘要

The present invention discloses a power semiconductor device manufactured using a chip-size package. The power semiconductor device includes a die having a first surface and a second surface opposite to the first surface; at least one lead frame, each of the at least one lead frames having a first terminal and a second terminal, the first terminal electrically connected to a corresponding terminal of the first surface or a corresponding terminal of the second surface of the die; an electrically conductive plate electrically connected to a corresponding terminal of the second surface of the die; and a packaging material used to encapsulate the die, one terminal of the lead frame and the electrically conductive plate. The second terminal of each lead frame and a surface of the electrically conductive plate opposite to the surface electrically connected to the second surface of the die are exposed to the outside of the packaging material and lie on the same plane.