METHOD FOR FORMING CAPACITOR OF SEMICONDUCTOR DEVICE TO FORM A SMOOTH STORAGE NODE

摘要

PURPOSE: A method for forming a capacitor of a semiconductor device is provided to form a smooth storage node by using a hard mask of amorphous silicon. CONSTITUTION: An interlayer dielectric(2) is formed on a semiconductor substrate(1). A plurality of plugs(4) are formed by patterning the interlayer dielectric. A barrier layer(6) is formed thereon. A capacitor oxide layer(8) is formed on the barrier layer. A hard mask layer is formed on the capacitor oxide layer and an annealing process is performed thereon. A photoresist is coated on the hard mask. A storage node pattern is formed by performing an exposure process. The exposed hard mask is etched by the exposure process. The exposed capacitor oxide layer is etched thereby. A storage node(14) is formed on the entire surface of the etched capacitor oxide layer.