METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE TO SOLVE STEP DIFFERENCE BETWEEN CELL AND PERIPHERAL REGIONS

摘要

PURPOSE: A method for manufacturing a semiconductor device is provided to improve uniformity between cell regions and peripheral regions by simultaneously forming a storage node on the cell region and a metal pattern on the peripheral region. CONSTITUTION: A wafer(201) having a transistor is prepared. A bit line contact region and a storage node contact region are simultaneously opened. A bit line contact plug(203a) and a storage node contact plug(203b) are formed by filling a polysilicon layer in the opening. A first insulating layer(204) is formed to expose the bit line contact plug. A bit line(205) is formed to connect the bit line contact plug. A second insulating layer(206) is formed to expose the storage node contact plug and a metal contact of a peripheral region. A storage node pattern(210a) and a metal pattern(210b) of the peripheral region are simultaneously formed.