发明名称 Method of making semiconductor device
摘要 A method of manufacturing a semiconductor device using a lead frame composed of a plate-like body having a non-planar upper surface and a planar under surface. The plate-like body includes a first thin portion for mounting a semiconductor chip with pad electrodes, first thick portions radially arranged for forming lead electrodes respectively corresponding to the pad electrodes of the semiconductor chip, a second thin portion between pairs of the first thick portions, a third thin portion peripherally surrounding the first thick portions, and a second thick portion surrounding the third thin portion. The semiconductor chip and the lead electrodes are sealed to the same surface as all of the thin portions with a resin, after making a connection between the pad electrodes and the lead electrodes with connecting wires. The first, second, and third thin portions are removed by etching so that each of the lead electrodes includes a thin internal lead portion having a connection part on an upper surface side and a thick external electrode portion protruding toward an under surface and forming a connection part. The resin at the underside is substantially co-planar with the under surface of the internal lead portion of the lead electrodes, and the external electrode portion protrudes downward from the underside of the resin layer.
申请公布号 US6790711(B2) 申请公布日期 2004.09.14
申请号 US20030663940 申请日期 2003.09.17
申请人 MITSUBISHI DENKI KABUSHIKI KAISHA 发明人 TAKAHASHI YOSHIHARU
分类号 H01L23/12;H01L21/48;H01L21/56;H01L23/28;H01L23/31;H01L23/495;H01L23/50;H05K3/34;(IPC1-7):H01L21/44 主分类号 H01L23/12
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