CVD EQUIPMENT TO INCREASE MIXING RATE OF SOURCE GASES AND IMPROVE UNIFORMITY OF MATERIAL LAYER ON WAFER

摘要

PURPOSE: CVD(chemical vapor deposition) equipment is provided to increase a mixing rate of source gases and improve uniformity of a material layer deposited on a wafer by installing at least one turbulent air generating bar in a mixture gas injecting pipe. CONSTITUTION: At least two source gases are induced to a mixture gas box(100). A shower head(110) has an inner space. A plurality of injecting holes(111) are installed in the lower surface of the shower head at regular intervals. The mixture gas box is connected to the shower head by the mixture gas injecting pipe(120). At least one turbulent air generating bar(130) crosses the mixture gas injecting pipe.