发明名称 PATTERN FOR MEASURING OVERLAY ACCURACY OF SEMICONDUCTOR DEVICE HAVING A PROTRUDING OUTER BOX AND A RECTANGULAR INNER BOX
摘要 PURPOSE: A pattern for measuring overlay accuracy of a semiconductor device is provided to restrict movement of an outer box and an inner box due to movement of a lower layer by increasing a contact area among an outer box and an inner box and a substrate. CONSTITUTION: A pattern for measuring overlay accuracy of a semiconductor device is formed with an outer box and an inner box. The outer box(22) is formed in a previous layer. The inner box(24) is formed on a present layer. The outer box is formed with a shape of a rectangular frame having edges including projections. A contact area between a lower layer and the outer box is increased by the edges including projections. The inner box is installed within the outer box and is formed with a rectangular shape.
申请公布号 KR20040078356(A) 申请公布日期 2004.09.10
申请号 KR20030013264 申请日期 2003.03.04
申请人 HYNIX SEMICONDUCTOR INC. 发明人 KO, CHA WON;KWON, WON TAEK
分类号 H01L21/027;(IPC1-7):H01L21/027 主分类号 H01L21/027
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