发明名称 |
PATTERN FOR MEASURING OVERLAY ACCURACY OF SEMICONDUCTOR DEVICE HAVING A PROTRUDING OUTER BOX AND A RECTANGULAR INNER BOX |
摘要 |
PURPOSE: A pattern for measuring overlay accuracy of a semiconductor device is provided to restrict movement of an outer box and an inner box due to movement of a lower layer by increasing a contact area among an outer box and an inner box and a substrate. CONSTITUTION: A pattern for measuring overlay accuracy of a semiconductor device is formed with an outer box and an inner box. The outer box(22) is formed in a previous layer. The inner box(24) is formed on a present layer. The outer box is formed with a shape of a rectangular frame having edges including projections. A contact area between a lower layer and the outer box is increased by the edges including projections. The inner box is installed within the outer box and is formed with a rectangular shape.
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申请公布号 |
KR20040078356(A) |
申请公布日期 |
2004.09.10 |
申请号 |
KR20030013264 |
申请日期 |
2003.03.04 |
申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
KO, CHA WON;KWON, WON TAEK |
分类号 |
H01L21/027;(IPC1-7):H01L21/027 |
主分类号 |
H01L21/027 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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