PHASE CHANGE MEMORY DEVICE AND FORMING METHOD THEREOF TO INCREASE SPECIFIC RESISTANCE OF INFORMATION STORAGE ELEMENT

摘要

PURPOSE: A phase change memory device and a forming method thereof are provided to increase specific resistance of an information storage element by inserting high-resistance phase change material patterns among phase change material patterns. CONSTITUTION: A bottom interlayer dielectric(104) is formed on an upper surface of a semiconductor substrate(101). A plurality of phase change material patterns(107a',107b',107c') are sequentially stacked on an upper surface of the bottom interlayer dielectric. A plurality of high-resistance phase change material patterns(109a',109b') are inserted among the phase change material patterns. A resistant value of the high-resistance phase change material pattern is larger than the resistant value of the phase change material pattern.