| 摘要 |
PURPOSE: A method for fabricating an electrode consisting of a thin film poly layer on an AMLCD(Active Matrix LCD) is provided to perform a pixel thin film poly deposition process within the shortest time through a high-temperature, high-voltage gas ratio, thereby realizing a more delicate thin film density without resistance loss. CONSTITUTION: A liquid crystal layer is formed on a semiconductor substrate. An SIO(Silicon On Insulator) layer(102) is formed on the liquid crystal layer. A thin film poly layer(106) is formed on the SIO layer(102). The thin film poly layer(106) is used as an electrode for controlling an AMLCD. The thin film poly layer(106) is formed at about 630 to 650 degrees centigrade, under about 45 to 55 Pa, with about 430 to 500sccm of SiH4.
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