| 摘要 |
The invention relates to the making of color image sensors for miniature cameras. The method of fabrication includes the formation on the front face of a semi-conductive wafer of a series of active zones comprising image detection circuits, each corresponding to a respective image sensor. Each active zone is surrounded by input/output pads. The wafer is transferred by its front fact against the front face of a supporting substrate. The major part of the thickness of the semiconductor wafer is eliminated, leaving a very fine semi-conductive layer including the image detection circuits on the substrate. This method is characterized in that firstly, layers of color filters are deposited and then etched on the semi-conductive layer thus thinned. Secondly, the substrate includes connection pads laid out with the same geometry as the pads of each active zone so as to come into a position facing these pads during the transfer, to solder a respective pad of the substrate to a corresponding pad of the semi-conductive wafer. Finally, the substrate is diced into individual sensors after the deposition of the color filters. |
