发明名称 |
RELAXATION OF A THIN LAYER AFTER ITS TRANSFER |
摘要 |
<p>The invention relates to a method of forming a relaxed or pseudo-relaxed layer on a substrate, the relaxed layer (2') being in a material selected from semiconductior materials, characterized in that the method comprises the following steps: (a) growing on a donor substrate (1) an elastically strained layer (2) consisting of at least a material selected among the semiconductor materials; (b) forming on the strained layer (2) or on a receiving substrate (7), a vitreous layer (4) made of a material viscous from a viscosity temperature; (c) bonding the receiving substrate (7), to the strained layer (2) via the vitreous layer (4); (d) removing a portion of the donor substrate (1), so as to form a structure comprising the receiving substrate (2), the vitreous layer (4), the strained layer (2) and the unremoved portion of the donor substrate (1) which thereby forms a surface layer (1B); (e) heat treating the structure at a temperature close to or higher than the viscosity temperature. The invention further relates to structures obtained during the method of forming a relaxed or pseudo-relaxed layer on a substrate.</p> |
申请公布号 |
WO2004077552(A1) |
申请公布日期 |
2004.09.10 |
申请号 |
WO2004IB00927 |
申请日期 |
2004.03.01 |
申请人 |
S.O.I.TEC SILICON ON INSULATOR TECHNOLOGIES;GHYSELEN, BRUNO;MAZURE, CARLOS;ARENE, EMMANUEL |
发明人 |
GHYSELEN, BRUNO;MAZURE, CARLOS;ARENE, EMMANUEL |
分类号 |
H01L21/324;H01L21/762;(IPC1-7):H01L21/762;H01L21/20 |
主分类号 |
H01L21/324 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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