| 摘要 |
<p>A projection exposing method capable of minimizing a reticle aligning time to obtain a high throughput even if the transmittance of a projection optical system is reduced or the number of reticle marks increases. A reticle-side reference mark plate (8) having a first reference mark is provided on a reticle stage (2), and a reticle alignment sensor (10) is disposed in a position away from a projection optical system (11) in a scanning direction set at scanning exposure time. The positional relation between the first reference mark and a second reference mark on a wafer stage (14) side is measured in advance by a calibration mechanism (16) via the projection optical system (11). Subsequent to this measurement, the positional relations between the first reference mark and a reticle mark is measured by the reticle alignment sensor (10), the positional relation between the second reference mark and a wafer mark is measured by a wafer alignment sensor (15), and the reticle (2) and the wafer (12) are aligned based on the measurement results.</p> |
