发明名称 |
Matrix of detector pixels integrated on a read circuit for the production of photoelectric detector for imaging equipment such as scanners, photographic equipment, digital cameras and biosensors |
摘要 |
<p>A detector pixel incorporates a photosensitive semiconducting zone (22) having a first surface covered by a first electrode (26) and a second surface situated opposite the first surface and covered by a second electrode (20, 21). The photosensitive semiconducting zone allows the conversion to electric charges of the incident photons received on the first face. In a matrix of these detector pixels, the first electrode of at least one detector pixel includes a metal motif (26) able to collect the electric charges generated. Independent claims are also included for: (1) a photoelectric detector incorporating a matrix of detector pixels and a read circuit for the charges detected by the detector pixels; (2) a method for the fabrication of a matrix of detector pixels; (3) a method for the fabrication of a photoelectric detector incorporating this matrix of detector pixels.</p> |
申请公布号 |
FR2852147(A1) |
申请公布日期 |
2004.09.10 |
申请号 |
FR20030002782 |
申请日期 |
2003.03.06 |
申请人 |
COMMISSARIAT A L'ENERGIE ATOMIQUE |
发明人 |
GUEDJ CYRIL;MOUSSY NORBERT |
分类号 |
H01L27/146;H01L31/0224;(IPC1-7):H01L27/146;H01L31/022 |
主分类号 |
H01L27/146 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|