发明名称 Matrix of detector pixels integrated on a read circuit for the production of photoelectric detector for imaging equipment such as scanners, photographic equipment, digital cameras and biosensors
摘要 <p>A detector pixel incorporates a photosensitive semiconducting zone (22) having a first surface covered by a first electrode (26) and a second surface situated opposite the first surface and covered by a second electrode (20, 21). The photosensitive semiconducting zone allows the conversion to electric charges of the incident photons received on the first face. In a matrix of these detector pixels, the first electrode of at least one detector pixel includes a metal motif (26) able to collect the electric charges generated. Independent claims are also included for: (1) a photoelectric detector incorporating a matrix of detector pixels and a read circuit for the charges detected by the detector pixels; (2) a method for the fabrication of a matrix of detector pixels; (3) a method for the fabrication of a photoelectric detector incorporating this matrix of detector pixels.</p>
申请公布号 FR2852147(A1) 申请公布日期 2004.09.10
申请号 FR20030002782 申请日期 2003.03.06
申请人 COMMISSARIAT A L'ENERGIE ATOMIQUE 发明人 GUEDJ CYRIL;MOUSSY NORBERT
分类号 H01L27/146;H01L31/0224;(IPC1-7):H01L27/146;H01L31/022 主分类号 H01L27/146
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