| 摘要 |
The invention relates to an optoelectronic component (10), comprising a vertical semi-conducting structure with a region having a flow of a current of holes (R2) and an active layer (CA). Said region with a flow of a current of holes comprises a first semiconducting layer (2), which is doped p, and with a given valence band level called the first level, a second semiconductor layer (4), called the barrier layer with a given valence band level called the second level, below the first level, a third semiconductor layer (6) doped p, with a given valence band level called the third level, distinct from the second level and comprising a semiconductor layer doped p called the band adaptation layer (3). The barrier layer (4) is a stop-etch layer. The component further comprises a semiconductor layer, called the transition band (5), arranged between the barrier layer (4) and the third layer, with a semiconductor composition which varies gradually to guarantee a transition of valence band levels essentially continuously between said second and third levels. |
