SILICON CRYSTALLIZATION SYSTEM AND METHOD FOR CRYSTALLIZING SILICON

摘要

PURPOSE: A silicon crystallization system and a method for crystallizing silicon are provided to reduce a crystallization difference of a polycrystalline silicon layer due to non-uniformity of laser beams by rotating the laser beams as much as 180 degrees between the first and the second scanning processes. CONSTITUTION: A laser generation unit(10) is used for generating laser beams. A plurality of optic systems(20) are used for controlling the laser beams generated from the laser generation unit. An insulating substrate(110) is loaded on an upper surface of a stage(30). An amorphous silicon layer is formed on the insulating substrate. The amorphous silicon layer is crystallized as a polycrystalline silicon layer by the laser beams. One of the optic systems is formed with a rotary optic system for rotating the laser beams as much as 180 degrees.