| 摘要 |
<p>A multilayer unit comprising a supporting substrate, an electrode layer, and a dielectric layer is disclosed. The supporting substrate is composed of fused silica. The electrode layer formed on the supporting substrate is anisotropic and conductive, is composed of a BSCCO (bismuth strontium calcium copper oxide) having a stoichiometric composition expressed by Bi2Sr2CaCu2O8 on which a dielectric material containing a bismuth lamellar compound can be epitaxially grown, and is oriented along the c-axis. The dielectric layer is formed by epitaxially growing a dielectric material containing a bismuth lamellar compound having a composition expressed by SrBi4Ti4O15 on the electrode layer, and is oriented along the c-axis. The multilayer unit having the above-described structure comprises the dielectric layer containing the bismuth lamellar compound oriented along the c-axis. Consequently, when a thin film capacitor is produced by arranging an upper electrode on the dielectric layer and a voltage is applied between the electrode layer and the upper electrode, the direction of the electric field generally agrees with the c-axis of the bismuth lamellar compound contained in the dielectric layer. As a result, ferroelectric properties of the bismuth lamellar compound in the dielectric layer are suppressed, and thus paraelectric properties thereof are sufficiently exhibited, thereby enabling to produce a small-sized thin film capacitor with high capacity and excellent dielectric characteristics.</p> |
