| 摘要 |
PURPOSE: A semiconductor laser diode and a fabricating method thereof are provided to enhance an optical output and lengthen a lifetime by forming a window layer having an increased energy band gap on a mirror facet. CONSTITUTION: An n-clad layer(21), an active layer(22), and a p-clad layer(23) are formed on an n-GaAs substrate(20). A top part of the p-clad layer is etched partially. A ridge is formed to the longitudinal direction of the p-clad layer. A current blocking layer(24) is formed on the etched p-clad layer. A p-cap layer(25) is formed on the ridge and the current blocking layer. A first dielectric layer and a diffusion barrier are formed on the p-cap layer. The p-cap layer is partially exposed by etching the diffusion barrier and the first dielectric layer. A second dielectric layer is formed on the exposed p-cap layer and the diffusion barrier. A window layer(29) is formed between the p-cap layer and the n-clad layer. The first dielectric layer, the diffusion barrier, and the second dielectric layer are removed. A p-pad electrode(30) and an n-pad electrode(31) are formed on an upper surface of the p-cap layer and a bottom of the n-GaAs substrate.
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