| 摘要 |
<p>A semiconductor memory characterized by comprising a bit line, a transistor connected with the bit line, a ferroelectric memory cell connected with the bit line through the transistor, a shift circuit connected with the bit line and pulling down a data potential appearing on the bit line depending on the data stored in the memory cell, and a sense amplifier connected with the bit line and the ground potential, for amplifying the difference between the data potential pulled down by the shift circuit and the ground potential.</p> |
