DISTRIBUTED BRAGG REFLECTOR FOR OPTOELECTRONIC DEVICE

摘要

An oxide-confined VCSELs(100) having a distributed Bragg reflector (180, 238) with a heavily doped high Al content oxide aperture forming layer (190, 140) disposed between a low Al content first layer (192, 142) and a medium Al content second layer (194, 144). Between the first layer and the oxide aperture forming layer there may be a thin transition region (196, 146) wherein the Al content changes from a higher Al content to a lower Al content. In some embodiments, the Al concentration from the oxide aperture forming layer (190, 140) to the second layer (194, 144) may occur in a step. The oxide aperture forming layer (190, 140) may be disposed at or near a null or a node (y) of the electric field produced by resonant laser light. During the oxidization of the oxide aperture forming layer, all or some of the other aluminum bearing DBR layers (180) may also become oxidized, but to a substantially lesser degree. The junction (214) between the oxidized portion (212) and un-oxidized portion of these layers is believed to reduce the stability and/or reliability of the device. To alleviate this, the present invention contemplates providing an implant (218), etch or other suitable process to reduce or eliminate one or more electrical artifacts associated with the junction between the oxidized portion (212) and un-oxidized portion of these layers (180) as well as reducing the oxidation of other aluminum bearing layers of the DBR (180).