| 摘要 |
PURPOSE: A method for forming a self-aligned contact of a semiconductor device is provided to prevent damage of a gate electrode by performing a self-aligned contact etch process for forming the gate electrode having an acute top part. CONSTITUTION: The first and the second capping insulating layers(47,49) are formed on a conductive layer for gate electrode. An oxide layer as the third capping layer is formed on the second capping insulating layer. A gate electrode is formed by performing a photo-etch process using a gate electrode mask. A top part of the gate electrode is formed with an acute structure. An insulating layer spacer(54) is formed on a sidewall of the gate electrode. A landing plug is formed on a doped junction region between the gate electrodes and the third capping layer is removed therefrom. An interlayer dielectric is formed thereon. A storage electrode contact hole(63) for exposing the landing plug is formed by performing an etch process.
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