发明名称 CRYSTALLIZATION APPARATUS AND METHOD OF AMORPHOUS SILICON
摘要 <p>A silicon crystallization system includes a beam generator generating a laser beam, first and second optical units for controlling the laser beam from the beam generator; and a stage for mounting a panel including an amorphous silicon layer to be polycrystallized by the laser beam from the optical units. The first optical unit makes the laser beam have a transverse edge and a longitudinal edge longer than the transverse edge, and the second optical unit makes the laser beam have a transverse edge and a longitudinal edge shorter than the transverse edge.</p>
申请公布号 WO2004077544(A1) 申请公布日期 2004.09.10
申请号 WO2004KR00382 申请日期 2004.02.24
申请人 SAMSUNG ELECTRONICS CO. LTD.;CHUNG, UI-JIN;KIM, DONG-BYUM;LEE, SU-GYEONG;KANG, MYUNG-KOO;KIM, HYUN-JAE 发明人 CHUNG, UI-JIN;KIM, DONG-BYUM;LEE, SU-GYEONG;KANG, MYUNG-KOO;KIM, HYUN-JAE
分类号 H01L21/324;B23K26/06;B23K26/067;B23K26/073;H01L21/20;H01L21/268;H01L21/77;(IPC1-7):H01L21/324 主分类号 H01L21/324
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