Delimitation of a conducting element positioned on an insulating layer using a mask to delimit a complementary zone that is rendered insulating, notably for the fabrication of metal oxide semiconductor transistors

摘要

The delimiting of a conducting element (1) positioned on an insulating layer (2), comprises the deposition of a conducting layer (3) on the leading surface of the insulating layer disposed on a substrate (4), the formation of a mask (5) on at least one zone (6) of the conducting layer destined to form the conducting element, in a manner to delimit at least one complementary zone (7) not covered by the mask, and the removal of the mask. After the formation of the mask, the complementary zones of the conducting layer are rendered insulating. An independent claim is also included for a transistor incorporating an electrode gate produced by this method of delimiting a conducting element.