| 摘要 |
PURPOSE: A refresh period increase of a semiconductor memory device is provided to reduce a difference between a readability period as to a high charge level and a readability period as to a low charge level. CONSTITUTION: According to a data accessing method, the first bit line(BL1) and the second bit line(BL2) are precharged. Charge sharing between capacitance of a memory cell and the precharged first bit line is permitted. The precharged second bit line is biased. And a potential difference between a potential of the fist bit line and a potential of the biased second bit line is sensed.
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