发明名称 |
ETCHING RESISTANT FILM, PROCESS FOR PRODUCING THE SAME, SURFACE CURED RESIST PATTERN, PROCESS FOR PRODUCING THE SAME, SEMICONDUCTOR DEVICE AND PROCESS FOR PRODUCING THE SAME |
摘要 |
<p>A surface cured resist pattern suitable for minute superfine pattern formation, obtained by curing the surface of a resist pattern of poor etching resistance so as to enhance the etching resistance; and an efficient process for producing the same. The process for producing a surface cured resist pattern is specifically a process for producing a surface cured resist pattern whose surface has etching resistance characterized in that an organic compound is selectively deposited on the resist pattern. Preferably, this deposition is carried out, for example, in a mode wherein dielectric gas plasma is employed, or in another mode wherein the organic compound deposited on a substrate and an object to be treated are arranged in opposite relationship, or in still another mode wherein the dielectric gas plasma is introduced from a substrate side opposite to the side of organic compound deposition.</p> |
申请公布号 |
WO2004077539(A1) |
申请公布日期 |
2004.09.10 |
申请号 |
WO2003JP02324 |
申请日期 |
2003.02.28 |
申请人 |
FUJITSU LIMITED;NOZAKI, KOJI;TAKEDA, MASAYUKI |
发明人 |
NOZAKI, KOJI;TAKEDA, MASAYUKI |
分类号 |
B44C1/22;G03F7/40;H01L21/027;H01L21/3065;H01L21/8247;(IPC1-7):H01L21/306 |
主分类号 |
B44C1/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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