发明名称 Apparatus for thin film deposition, especially under reactive conditions
摘要 Apparatus and method for thin film deposition especially in reactive conditions. The most important problem solved by the invention is the realization of optical coatings with negligible optical absorption, of high quality and low cost even on unheated substrates, being the improvement due to the introduction of a further plasma at RF/pulsed DC, in comparison with the previous techniques, produced by the substrates holder RD/pulsed DC bias which generates a plasma in front of the substrates. The invention lies in the technical field of the thin film treatments and in the application field of the production of thin films, in particular for optical use. This further plasma allows obtaining the right stoichiometry of the deposited film by increasing the reactivity of the reactive gas present in the plasma and, in addition, introduces an energetic ion bombardment of the substrate before and during the growth of the film which improves the adherence and the deposit compactness.
申请公布号 US2004173160(A1) 申请公布日期 2004.09.09
申请号 US20040804350 申请日期 2004.03.18
申请人 MISIANO CARLO;PULKER HANS K. 发明人 MISIANO CARLO;PULKER HANS K.
分类号 C23C14/00;C23C14/32;(IPC1-7):C23C16/00 主分类号 C23C14/00
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