发明名称 |
Method of etching magnetic and ferroelectric materials using a pulsed bias source |
摘要 |
A method for etching magnetic and ferroelectric materials using a pulsed substrate biasing technique (PSBT) that applies a plurality of processing cycles to the substrate, where each cycle comprises a period of plasma etching without substrate bias and a period of plasma etching with the substrate bias. In exemplary applications, the method is used for fabricating magneto-resistive random access memory (MRAM) and ferroelectric random access memory (FeRAM) devices.
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申请公布号 |
US2004173570(A1) |
申请公布日期 |
2004.09.09 |
申请号 |
US20030382964 |
申请日期 |
2003.03.05 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
YING CHENTSAU;NALLAN PADMAPANI C.;KUMAR AJAY;CHEN XIAOYI |
分类号 |
C23F4/00;H01F41/30;H01L21/311;H01L21/3213;H01L21/8246;(IPC1-7):C23F1/00;B44C1/22;C03C15/00;C03C25/68 |
主分类号 |
C23F4/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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