| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method for manufacturing an amorphous silicon doped thin film with which any adverse influence is not exerted upon electric characteristics and light absorption is also suppressed. <P>SOLUTION: In the method for manufacturing the amorphous silicon doped thin film with chemical vapor growth using a silicon-containing gas, a hydrohalic gas or a halogen gas and a doping gas, an optical band gap of the amorphous silicon doped thin film is 1.75eV or more. The hydrohalic gas may also be HF, HCl, HBr or HI, the halogen gas may also be F<SB>2</SB>, Cl<SB>2</SB>, Br<SB>2</SB>or I<SB>2</SB>, and the doping gas may also be a B-containing gas or a P-containing gas. <P>COPYRIGHT: (C)2004,JPO&NCIPI</p> |
