| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory having a small-sized layout. <P>SOLUTION: The nonvolatile semiconductor memory has a memory-cell array 4000 so constituted as to provide a plurality of memory cells 410 respectively in its row an column directions. The memory-cell array 4000 has a plurality of element separating regions 900, and each of the plurality of memory cells 410 has a source region, a drain region, a channel region interposed between the source and drain regions, a selecting gate 411 and a word gate 412 provided oppositely to the channel region, and a nonvolatile memory element 413 formed between the word gate 412 and the channel region. A word-line connecting portion for connecting at least one of a plurality of wirings for the word gates 412 which are present in upper layers with at least one of the plurality of word gates 412 is provided on at least one element separating region 900 of the plurality of element separating regions 900. <P>COPYRIGHT: (C)2004,JPO&NCIPI</p> |
