GaN SINGLE CRYSTAL SUBSTRATE, NITRIDE SEMICONDUCTOR EPITAXIAL SUBSTRATE, FIELD EMISSION TYPE CATHODE DEVICE, FIELD EMISSION DISPLAY DEVICE AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a GaN single crystal substrate, a nitride semiconductor epitaxial substrate, a field emission type cathode device and a field emission display device of which the dot structures of the substrate are easily formed, and to provide a method for manufacturing them.

SOLUTION: The GaN single crystal substrate 10 is characterized in that a plurality of micro-projections 14A, 14B are formed on the surface 12a by subjecting it to a heat-treatment process in a gas atmosphere at least containing NH3. The micro-projections 14A, 13B having dot structures on the substrate surface 12a are formed in the GaN single crystal substrate 10 by the heat-treatment. The dot structures in the GaN single crystal substrate 10 can be formed by a simple heat-treatment alone, which does not necessarily need a particular surface heat-treatment process or many steps.

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