| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To solve a problem in a semiconductor memory performing pre-charge that as the number of memory circuits connected to a pair of bit lines increases, the length of wiring constituting bit lines increases, thereby, parasitic capacitance present in wiring also increases, and when total sum of this parasitic capacitance becomes larger than current drive capability of the memory circuit, read-out of data is made instabe. <P>SOLUTION: In a pre-equalize-circuit used for this device, a potential being equal to threshold voltage when reversing a value of information stored in the memory circuit is set to a pair of a first bit line and a second bit line. <P>COPYRIGHT: (C)2004,JPO&NCIPI</p> |
