发明名称 FORMING METHOD FOR DEPOSITION FILM, MANUFACTURING METHOD FOR SUBSTRATE OF SEMICONDUCTOR ELEMENT, AND MANUFACTURING METHOD FOR PHOTOVOLTAIC ELEMENT
摘要 <p><P>PROBLEM TO BE SOLVED: To manufacture a high-quality semiconductor element and photovoltaic element with their good yields, by preventing the generations of their flaws, the faultinesses of their external appearances and their electrodes, and the like in their after-processes, etc. <P>SOLUTION: A forming method for deposition films is the one wherein a deposition film is formed on a strip-form substrate by a roll to roll method. The forming method has a process wherein the curl deformations in the longitudinal and widthwise directions of the strip-form substrate which occur by the deformation stress generated in the forming process of the deposition film are removed concurrently by applying external stresses to the substrate. <P>COPYRIGHT: (C)2004,JPO&NCIPI</p>
申请公布号 JP2004253704(A) 申请公布日期 2004.09.09
申请号 JP20030044345 申请日期 2003.02.21
申请人 CANON INC 发明人 NISHIMOTO TOMONORI
分类号 C23C14/56;C23C16/54;H01L21/205;H01L31/04;(IPC1-7):H01L31/04 主分类号 C23C14/56
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