发明名称 |
Advanced BEOL interconnect structures with low-k PE CVD cap layer and method thereof |
摘要 |
An advanced back-end-of-line (BEOL) metallization structure is disclosed. The structure includes a diffusion barrier or cap layer having a low dielectric constant (low-k), where the cap layer is formed of silicon nitride by a plasma-enhanced chemical vapor deposition (PE CVD) process. The metallization structure also includes an inter-layer dielectric (ILD) formed of a carbon-containing dielectric material having a dielectric constant of less than about 4, and a continuous hardmask layer overlying the ILD which is preferably formed of silicon nitride or silicon carbide. A method for forming the BEOL metallization structure is also disclosed. The method includes a pre-clean or pre-activation step to improve the adhesion of the cap layer to the underlying copper conductors. The pre-clean or pre-activation step comprises exposing the copper surface to a reducing plasma including hydrogen, ammonia, nitrogen and/or noble gases.
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申请公布号 |
US2004173908(A1) |
申请公布日期 |
2004.09.09 |
申请号 |
US20030706773 |
申请日期 |
2003.11.12 |
申请人 |
BARTH EDWARD;FITZSIMMONS JOHN A.;GATES STEPHEN M.;IVERS THOMAS H.;LANE SARAH L.;LEE JIA;MCDONALD ANN;MCGAHAY VINCENT;RESTAINO DARRYL D. |
发明人 |
BARTH EDWARD;FITZSIMMONS JOHN A.;GATES STEPHEN M.;IVERS THOMAS H.;LANE SARAH L.;LEE JIA;MCDONALD ANN;MCGAHAY VINCENT;RESTAINO DARRYL D. |
分类号 |
H01L21/311;H01L21/314;H01L21/316;H01L21/318;H01L21/768;H01L23/532;(IPC1-7):H01L23/48 |
主分类号 |
H01L21/311 |
代理机构 |
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地址 |
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