| 摘要 |
A semiconductor device for forming a coil with a high inductance and a high Q value on a semiconductor substrate. A semiconductor device 10 comprises a rectangular semiconductor substrate 12, pads formed near four corners of this semiconductor substrate 12, pads 30 formed in the peripheral region along each side other than the corners, and a bonding wire 40 for connecting adjacent pads 20. The circulation of the bonding wire 40 along the periphery of the semiconductor substrate 12 with the pads 20 formed in the corners constitutes a coil.
|
