发明名称 HYBRID INTEGRATED CIRCUIT DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To provide a small-size radiofrequency power module which can reduce a packaging area. <P>SOLUTION: Hybrid integrated circuit device has a cryogenic calcination multilayer interconnection board, at least one or more active components(FET chip) and passive components which are loaded on major faces of the multilayer interconnection board, a conductive wire for connecting an electrode of the active components with a wiring(Ag-Pt) of the multilayer interconnection board, a cap fixed to the multilayer interconnection board so as to cover the major faces of the multilayer interconnection board, and plural multilayer-interconnected electrode terminals which are mounted on a rear face of the multilayer interconnection board. A lower part of the multilayer interconnection board has a strip line structure, and an upper part of the multilayer interconnection board has a microstrip line structure. A ground wiring has a network structure. A semiconductor chip is fixed to a hollow provided on the major faces of the multilayer interconnection board, and the height of the electrode surface of the semiconductor chip is set to be almost the same as the height of the wiring surface of the multilayer interconnection board. A thermal via is provided under the semiconductor chip. <P>COPYRIGHT: (C)2004,JPO&NCIPI
申请公布号 JP2004253821(A) 申请公布日期 2004.09.09
申请号 JP20040170999 申请日期 2004.06.09
申请人 RENESAS TECHNOLOGY CORP;RENESAS EASTERN JAPAN SEMICONDUCTOR INC 发明人 NUMANAMI MASAHITO;TSUCHIYA KATSUJI;ENDO TSUNEO;NUNOKAWA YASUHIRO;KAMISHIRO IWAMICHI;ADACHI TETSUAKI;SUDO KAZUO
分类号 H01L25/00 主分类号 H01L25/00
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