PHASE SHIFT MASK, METHOD FOR FORMING PATTERN BY USING PHASE SHIFT MASK, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a phase shift mask for forming a pattern having excellent dimensional uniformity at a low cost without decreasing the integration degree, and to provide a method for forming a pattern by using the above phase shift mask and a method for manufacturing an electronic device.

SOLUTION: The phase shift mask has a halftone light shielding film 2 formed on a substrate 1 and having an opening 2a to expose a part of the surface of the substrate 1. The phase of the exposure light passing through the halftone light shielding film 2 differs by 180°from the phase of the exposure light passing through the opening 2a. The transmission rate defined as the ratio of the intensity of the exposure light passing through the halftone light shielding film 2 to the intensity of the exposure light passing through the opening 2a is≥15% and≤25%. The dimension of the opening 2a is≥0.26 and≤0.45 on the basis of (wavelengthλof the exposure light)/(numerical aperture NA)=1.

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