发明名称 SEMICONDUCTOR STORAGE DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor storage device for suppressing peak current generated when each memory in the semiconductor memory simultaneously executes parallel operation. SOLUTION: In the semiconductor storage device including a plurality of memory devices 1a(1b), the plurality of the memory devices are divided into first and second groups each operated in parallel during data reading. Timings activating sense amplifiers belonging to the divided first and second groups are differentiated respectively. Thus, the maximum value of peak current generated when the sense amplifiers are activated during data reading is halved in the whole semiconductor storage device. Data reading operation can be stably executed by suppressing the peak current. COPYRIGHT: (C)2004,JPO&NCIPI
申请公布号 JP2004253038(A) 申请公布日期 2004.09.09
申请号 JP20030041199 申请日期 2003.02.19
申请人 RENESAS TECHNOLOGY CORP 发明人 FUKIAGE TAKAHIKO
分类号 G11C11/409;G11C7/00;G11C7/06;G11C7/08;G11C8/12;G11C8/18;G11C11/401;G11C11/406;G11C11/407;G11C11/4091;(IPC1-7):G11C11/409 主分类号 G11C11/409
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