发明名称 |
Interconnect structure having improved stress migration reliability |
摘要 |
An interconnect structure which has improved stress migration reliability is disclosed. According to one exemplary embodiment, the interconnect structure comprises a top interconnect metal layer, at least one via and a bottom interconnect metal layer. The bottom interconnect metal layer comprises at least one finger. The at least one via electrically connects the top interconnect metal layer to the at least one finger. The finger width of the at least one finger is less than a bottom layer width of the bottom interconnect metal layer. In another embodiment, a method for fabricating the above interconnect structure is disclosed.
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申请公布号 |
US2004173803(A1) |
申请公布日期 |
2004.09.09 |
申请号 |
US20030382560 |
申请日期 |
2003.03.05 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
KIM HYEON-SEAG |
分类号 |
H01L23/522;H01L23/528;(IPC1-7):H01L27/15 |
主分类号 |
H01L23/522 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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