| 摘要 |
According to the invention, a complex (M) which is formed by growing a polycrystalline beta -SiC plate (2) on the surface of a single crystal alpha -SiC base material (1) by the thermal CVD method is heat-treated at a high temperature of 1,900 to 2,400 DEG C, whereby polycrystals of the polycrystalline cubic beta -SiC plate (2) are transformed into a single crystal, so that the single crystal is oriented in the same direction as the crystal axis of the single crystal alpha -SiC base material (1) and integrated with the single crystal of the single crystal alpha -SiC base material (1) to be largely grown. As a result, single crystal SiC of high quality which has a very reduced number of lattice defects and micropipe defects can be efficiently produced while ensuring a sufficient size in the term of area. <IMAGE> |
