MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device for suppressing the surface roughness of a member to be etched caused by an insufficient selection ratio of the member to be etched and the resist at pattern etching. SOLUTION: The manufacturing method of the semiconductor device in the case of forming an inter-layer isolation film 3 on a semiconductor substrate 1 and forming a pattern on the inter-layer isolation film 3 by using the resist 6, includes the steps of: forming a sacrificial protective film 4 with a resistance to dry etching performance higher than that of the resist 6 on the inter-layer isolation film 3; forming the resist whose major component is a resin substantially including no aromatic ring as the resist 6 on the sacrificial protective film 4; forming a pattern by removing part of the inter-layer isolation film 3 through dry etching; removing the resist 6; and removing the sacrificial protective film 4. Then even when a shoulder cut 20 and a punch-through 21 take place in the resist 6 at dry etching for forming a wire pattern and the resist 6 result in being destroyed, the sacrificial protective film 4 protects the inter-layer isolation film 3 to prevent the surface roughness from being caused. COPYRIGHT: (C)2004,JPO&NCIPI