| 摘要 |
<P>PROBLEM TO BE SOLVED: To make the material sensitive to a high energy ray and to improve the sensitivity and resolution at a wavelength of ≤300 nm and resistance to oxygen plasma etching. <P>SOLUTION: The silicon containing resist material contains a high molecular compound containing a repeating unit represented by formula (1), wherein R<SP>1</SP>is H, a 1-10C linear, branched or cyclic alkyl, an acid-labile group or an adhesive group; R<SP>2</SP>-R<SP>4</SP>are the same or different and each a 1-10C linear, branched or cyclic alkyl or haloalkyl, or a 6-20C aryl; and m is a positive number. A fine pattern perpendicular to a substrate can easily be formed and a superior effect as a fine pattern forming material for manufacture of VSLI is shown. <P>COPYRIGHT: (C)2004,JPO&NCIPI |
