发明名称 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device which simplifies a manufacturing process, improves its stability more in a manufacturing process so as to improve the semiconductor devices in manufacturing yield, and furthermore selects permanent boards complying with various requirements such as a reduction in manufacturing cost, an improvement in heat releasing effect, and an increase in conductivity so as to reinforce and improve the characteristics of the semiconductor device. SOLUTION: Semiconductor device structures are made to grow on a temporary board, the temporary board is cleaved and divided into discrete blocks, the permanent board is pasted on the discrete block and turned upside down, the temporary board is separated off, and the semiconductor device is formed on the permanent board through a semiconductor device manufacturing process. COPYRIGHT: (C)2004,JPO&NCIPI
申请公布号 JP2004253407(A) 申请公布日期 2004.09.09
申请号 JP20030031084 申请日期 2003.02.07
申请人 ADVANCE EPITAXY TECHNOLOGY INC 发明人 GUO JAN-DAR;CHEN TSUNG-YU;CHUANG HUI-WEN;TSANG JIAN-SHIHN;TSAI WEN-CHUNG;CHAN SHIH-HSIUNG
分类号 H01L21/301;(IPC1-7):H01L21/301 主分类号 H01L21/301
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